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Datasheet 2SD2114 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | 2SD2114 | NPN Plastic-Encapsulate Transistor Elektronische Bauelemente
2SD2114
0.5A , 25V NPN Plastic-Encapsulate Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURE
High DC Current Gain. High Emitter-Base Voltage. VEBO=12V (Min.)
CLASSIFICATION OF hFE
Product-Rank 2SD2114-V
Range
820~1800 |
 SeCoS |
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| 4 | 2SD2114 | NPN Transistor TRANSISTOR (NPN)
FEATURES z High DC current gain. z High emitter-base voltage. z Low VCE (sat).
MARKING: BBV,BBW
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Curren |
 JinYu |
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| 3 | 2SD2114 | NPN Plastic Encapsulated Transistor
2SD2114
0.5 A, 25 V NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product A suffix of “-C” specifies halogen and lead free
FEATURES
z z z
High DC current gain :hFE = 1200(Typ) High emitter-base voltage. VEBO =12V (Min.) Low VCE (sat). VCE ( |
 SeCoS Halbleitertechnologie GmbH |
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| 2 | 2SD2114K | Power Transistor SMD Type
TransistIoCrs
Power Transistor 2SD2114K
Features
High DC current gain. High emitter-base voltage. Low VCE (sat).
+0.12.4 -0.1
SOT-23
2.9+0.1 -0.1
0.4+0.1 -0.1
3
12 0.95+0.1
-0.1
1.9+0.1 -0.1
+0.11.3 -0.1
0.55 0.4
Unit: mm 0.1+0.05
-0.01
+0.10.97 -0.1
Absolute Maximum Ratings Ta = 2 |
 Kexin |
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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