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Datasheet 2SD2102 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 2SD2102 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2102
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min) ·High DC Current Gain
: hFE= 1000(Min) @ IC= 2A, VCE= 3V
APPLICATIONS ·Designed for low frequency power amplifier applicat |
 Inchange Semiconductor |
 |
| 1 | 2SD2102 | SILICON NPN TRIPLE DIFFUSED LOW FREQUENCY POWER AMFPLIFIER 2SD2102
Transient Thermal Resistance Thermal resistance θj-c (°C/W)
10
3 TC = 25°C 1.0
0.3
0.1 1m
10m
100m
1.0
10
100
1000
Time t (s)
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 Hitachi Semiconductor |
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