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Datasheet 2SD1105 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 2SD1105 | SI NPN DIFFUSED JUNCTION MESA DARLINGTON |
 Panasonic Semiconductor |
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| 1 | 2SD1105 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD1105
DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V (Min) ·Wide Area of Safe Operation ·High Power and High Reliability
APPLICATIONS ·Designed for high power AF amplifier applications.
ABS |
 Inchange Semiconductor Company |
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