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Datasheet 2SC5928 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 49 | 2SC5900 | Silicon NPN Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC5900
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1700V (Min) ·High Switching Speed ·High Reliability
APPLICATIONS ·Color TV horizontal deflection output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMB |
 Inchange Semiconductor |
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| 48 | 2SC5900 | SILICON TRANSISTOR 2SC5900
No.
2SC5900
µ
16.0
5.0
3.4
5.6 3.1
8.0 22.0
21.0 4.0
2.8 2.0
20.4
0.7
0.9
1
2
5.45
3
3.5
5.45
0.8
2.1
2SC5900
µ µ
PW=20µs D.C. 1% INPUT
IB1 IB2 VR 50Ω + 100µF VBE= --5V + 470µF RB
OUTPUT
RL=66.7Ω
VCC=200V
°
° °
°
°
°
°
°
°
°
°
°
2SC5900
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 Sanyo Semicon Device |
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| 47 | 2SC5902 | Silicon NPN triple diffusion mesa type Power Transistors
2SC5902
Silicon NPN triple diffusion mesa type
Horizontal deflection output for TV
15.5±0.5
(10.0)
Unit: mm
φ 3.2±0.1 5˚
(4.5)
3.0±0.3 5˚
■ Features
• High breakdown voltage: VCBO ≥ 1 700 V • Wide safe operation area • Built-in dumper diode
26.5±0.5
(23.4)
(2 |
 Panasonic Semiconductor |
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| 46 | 2SC5904 | Silicon NPN triple diffusion mesa type Power Transistors
2SC5904
Silicon NPN triple diffusion mesa type
For Horizontal deflection output for TV, CRT monitor
15.5±0.5
(10.0)
Unit: mm
φ 3.2±0.1 5˚
(4.5)
■ Features
• High breakdown voltage (VCBO ≥ 1 700 V) • High-speed switching (tf < 200 nsec) • Wide safe operation area
26 |
Panasonic Semiconductor |
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