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Datasheet 2SC3709 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2SC3709 | NPN EPITAXIAL TYPE (HIGH CURRENT SWITCHING APPLICATIONS) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3709A
2SC3709A
High-Current Switching Applications
Unit: mm
• Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1451A
Maximum Ratings (Tc = 25°C)
Ch |
 Toshiba Semiconductor |
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| 2 | 2SC3709 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC3709
DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= 0.4V(Max)@IC= 6A ·Good Linearity of hFE ·High Switching Speed ·Complement to Type 2SA1451
APPLICATIONS ·Designed for high current switching app |
 Inchange Semiconductor |
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| 1 | 2SC3709A | High-Current Switching Applications 2SC3709A
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3709A
High-Current Switching Applications
Unit: mm • • • Low collector saturation voltage: VCE (sat) = 0.4 V (max) High-speed switching: tstg = 1.0 µs (typ.) Complementary to 2SA1451A
Maximum Ratings (Tc = 25°C)
Charac |
 Toshiba |
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