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Datasheet 2SC3356 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 13 | 2SC3356 | NPN Silicon RF Transistor PreliminaryData Sheet
2SC3356
R09DS0021EJ0300
NPN Silicon RF Transistor
Rev.3.00
NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold
Jun 28, 2011
FEATURES
• Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz � |
 Renesas |
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| 12 | 2SC3356 | Silicon NPN transistor 2SC3356
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.
特征 / Features
低噪声和高功率增益。 Low noise and high power gain.
用途 / Applications
用于甚高频、超高频和有线 |
 BLUE ROCKET ELECTRONICS |
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| 11 | 2SC3356 | Silicon Epitaxial Planar Transistor Production specification
Silicon Epitaxial Planar Transistor
FEATURES
z Low noise and high gain. NF=1.1dB TYP.,Ga=11dB TYP. @VCE=10V,IC=7mA, f=1.0GHz
z High power gain. MAG=13dB TYP. @VCE=10V,IC=20mA,f=1.0GHz.
Pb
Lead-free
2SC3356
APPLICATIONS
z Designed for low noise amplifier at VHF,UHF and C |
 Galaxy Microelectronics |
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| 10 | 2SC3356 | NPN Transistor 2SC3356
SOT-23-3L Transistor(NPN)
1. BASE
2. EMITTER
3. COLLECTOR
Features
Low noise amplifier at VHF, UHF and CATV band. Low Noise and High Gain High Power Gain
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg
Parameter Collector- Base Voltage Colle |
 LGE |
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