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Datasheet 2SC1971 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | 2SC1971 | NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications) |
 Mitsubishi Electric Semiconductor |
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| 3 | 2SC1971 | Silicon NPN Power Transistor
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC1971
DESCRIPTION ·High Power Gain: Gpe≥ 10dB,f= 175MHz, PO= 6W; VCC= 13.5V ·High Reliability
APPLICATIONS ·Designed for RF power amplifiers on VHF band mobile radio applications.
ABSO |
 Inchange Semiconductor |
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| 2 | 2SC1971 | NPN SILICON RF POWER TRANSISTOR 2SC1971
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2SC1971 is Designed for RF power amplifiers on VHF band mobile radio applications.
FEATURES INCLUDE:
• • • Replaces Original 2SC1971 in Most Applications High Gain Reduces Drive Requirements Economical TO-220CE Package
PACKAGE STY |
 Advanced Semiconductor |
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| 1 | 2SC1971 | Trans GP BJT NPN 17V 2A 3-Pin(3+Tab) TO-220 |
 New Jersey Semiconductor |
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