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2SA940 PDF ( Data Sheet ) |
No | Teilenummer | Beschreibung | Hersteller | |
7 | 2SA940 | Silicon PNP Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
2SA940
DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·DC Current Gain : hFE= 40-140@ IC= -0.5A ·Complement to Type 2SC2073 AP |
Inchange Semiconductor |
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6 | 2SA940 | POWER TRANSISTORS(1.5A/150V/25W) A
A
A
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Mospec Semiconductor |
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5 | 2SA940 | PNP Silicon Epitaxial Power Transistor 2SA940
®
2SA940
Pb Free Plating Product
Pb
PNP Silicon Epitaxial Power Transistor
FEATURES
z Complements the 2SC2073.
9.90±0.20
φ
± 60 3.
0.
20
4.50±0.20 1.30±0.20
15.70±0.20
13.08±0.20
COLLECTOR 2 BASE 1
9.19±0.20
z |
Thinki Semiconductor |
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4 | 2SA940 | Plastic-Encapsulated Transistors Transys
Electronics
L I M I T E D
TO-220 Plastic-Encapsulated Transistors
2SA940
TRANSISTOR (PNP)
TO-220
1. BASE 2. COLLECTOR
FEATURES Power dissipation PCM : 1.5 W (Tamb=25℃)
3. EMITTER
Collector current : -1.5 A ICM Collector-base |
TRANSYS |
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3 | 2SA940 | PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT) 2SA940
PNP
EPITAXIAL SILICON TRANSISTOR
POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT
TO-220
!
Complementary to 2SC2073
ABSOLUTE MAXIMUM RATING (Ta=25°c)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base volt |
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