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Datasheet 2SA1832-GR Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 18 | 2SA1830 | PNP Epitaxial Planar Silicon Transistor Ordering number:EN4409
2SA1830 : PNPEpitaxial Planar Silicon Transistor 2SC4734 ; NPN Triple Diffused Planar Silicon Transistor
2SA1830/2SC4734
High-Voltage Driver Applications
Features
· Large current capacity (IC=2A). · High breakdown voltage (VCEO≥400V). · Possible to offer the 2SA1830/2SC |
 Sanyo Semicon Device |
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| 17 | 2SA1831 | PNP Triple Diffused Planar Silicon Transistors Ordering number:EN3686A
PNPTriple Diffused Planar Silicon Transistors
2SA1831
High-Voltage Amplifier, High-Voltage Switching Applications
Features
· High breakdown voltage (VCEO min=–800V). · Small Cob (Cob typ=1.6pF). · High reliabirity (Adoption of HVP processes).
Package Dimensions
unit:m |
Sanyo Semicon Device |
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| 16 | 2SA1832 | TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) 2SA1832
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1832
Audio Frequency General Purpose Amplifier Applications
High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA) = 0.95 (typ.) • • • High |
 Toshiba Semiconductor |
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| 15 | 2SA1832 | PNP Silicon Plastic Encapsulated Transistor 2SA1832
Elektronische Bauelemente -0.15A , -50V PNP Silicon Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
High Voltage and High Current Excellent hFE Linearity Complementary to 2SC4738
A
M
3
SOT-523
3
CLASSIFICATIO |
 Secos |
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