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2 2SA1259   Silicon PNP Power Transistors

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= -2.5A ·Low Collector-Emitter Saturation Voltage : VCE(sat) = -1.5V(Max)@ IC= -2.5A ·Complement to Type 2SC3145
Inchange Semiconductor
Inchange Semiconductor
Datenblatt 2SA1259 pdf
1 2SA1259   PNP/NPN Epitaxial Planar Silicon Darlington Transistors

Ordering number:ENN1059D PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SA1259/2SC3145 60V/5A for High-Speed Drivers Applications Features · High fT. · High switching speed. · Wide ASO. Package Dimensions unit:mm 2010C [2
Sanyo Semicon Device
Sanyo Semicon Device
Datenblatt 2SA1259 pdf


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