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17 2SA1015   PNP EPITAXIAL PLANAR TRANSISTOR

DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS 2SA1015 TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in driver stage of AF amplifier general purpose amplification. Pinning 1 = Emitter 2 = Co
Dc Components
Dc Components
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16 2SA1015   Silicon PNP Power Transistors

INCHANGE Semiconductor isc Silicon PNP Transistor isc Product Specification 2SA1015 DESCRIPTION ·High Voltage and High Current Vceo=-50V(Min.),Ic=-150mA(Max) ·Excellent hFE Linearity ·Low Noise ·Complement to Type 2SC1815 APPLICAT
Inchange Semiconductor
Inchange Semiconductor
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15 2SA1015   PNP Transistor

SMD Type TransistIoCrs PNP Transistor 2SA1015 Features High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) Low niose: NF=1dB(Typ.) at f=1KHz +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11
Kexin
Kexin
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14 2SA1015   SILICON PNP TRANSISTOR

2SA1015(3CG1015) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于普通音频放大,激励级放大/Purpose: Audio frequency general purpose, driver stage amplifier applications. 特点:耐压高,电流容量大,极好的 h
LZG
LZG
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13 2SA1015   PNP Silicon Epitaxial Planar Transistor

2SA1015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, L , according to its DC current gain. As complementary type the NPN transistor 2SC1815
SEMTECH
SEMTECH
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