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2PG401 PDF ( Data Sheet ) |
No | Teilenummer | Beschreibung | Hersteller | |
1 | 2PG401 | Insulated Gate Bipolar Transistor IGBTs
2PG401
Insulated Gate Bipolar Transistor
s Features
q High breakdown voltage: VCES = 400V q Allowing to control large current: IC(peak) = 130A q Allowing to provide with the surface mounting package
7.2±0.3 0.8±0.2
unit: mm
7.0± |
Panasonic Semiconductor |
2PG40 Datasheet - resultados coincidentes |
Teilenummer | Beschreibung | Hersteller | |
2PG402 | Insulated Gate Bipolar Transistor |
Panasonic Semiconductor |
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2PG401 | Insulated Gate Bipolar Transistor |
Panasonic Semiconductor |
Teilenummer | Beschreibung | Hersteller | |
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