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Datasheet 2N7002T Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | 2N7002T | N-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate MOSFETS
2N7002T MOSFET (N-Channel)
V(BR)DSS
60 V
RDS(on)MAX
5Ω@10V
7Ω@5V
ID
115mA
SOT-523
3
1. GATE 2. SOURCE 3. DRAIN
1 2
FEATURE z High density cell design for low RDS(ON) z Voltage controlled small s |
 JCET |
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| 5 | 2N7002T | N-Channel Enhancement Mode Field Effect Transistor 2N7002T — N-Channel Enhancement Mode Field Effect Transistor
October 2007
2N7002T
N-Channel Enhancement Mode Field Effect Transistor
Features
• Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surfac |
 Fairchild Semiconductor |
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| 4 | 2N7002T | Small Signal MOSFET Elektronische Bauelemente
2N7002T
115 mAMPS, 60VOLTS, RDS(on)=7.5 W Small Signal MOSFET
RoHS Compliant Product
Small Signal MOSFET 115 mAmps, 60 Volts
N–Channel SOT–523
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ) Gate–Source Voltage
– Continuous � |
 SeCoS |
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| 3 | 2N7002T | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 2N7002T
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features
· · · · · · · · · · · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package
SOT-523
TOP VIEW A D B C G G S
NEW PRODUCT |
 Diodes Incorporated |
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