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2N7002DW Datenblatt PDF

No Teilenummer Beschreibung Hersteller PDF
7 2N7002DW   N-Channel Enhancement Mode Field Effect Transistor

2N7002DW — N-Channel Enhancement Mode Field Effect Transistor January 2015 2N7002DW N-Channel Enhancement Mode Field Effect Transistor Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Inpu
Fairchild Semiconductor
Fairchild Semiconductor
Datenblatt 2N7002DW pdf
6 2N7002DW   Small-Signal-Transistor

OptiMOS™ Small-Signal-Transistor Features • Dual N-channel • Enhancement mode • Logic level • Avalanche rated • Fast switching • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant • Halogen-free according to
Infineon Technologies
Infineon Technologies
Datenblatt 2N7002DW pdf
5 2N7002DW   Dual N-channel MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETs 2N7002DW V(BR)DSS 60 V Dual N-channel MOSFET RDS(on)MAX  5Ω@10V  7Ω@5V   FEATURE z High density cell design for low RDS(ON) z Voltage controlled
JCET
JCET
Datenblatt 2N7002DW pdf
4 2N7002DW   DUAL N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 2N7002DW 300mA, 60V DUAL N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N7002DW uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suit
Unisonic Technologies
Unisonic Technologies
Datenblatt 2N7002DW pdf
3 2N7002DW   DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

NEW PRODUCT 2N7002DWA DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 60V RDS(ON) 8Ω @ VGS = 5V 6Ω @ VGS = 10V Package SOT363 ID TA = +25°C 170mA 200mA Description This new generation MOSFET is designed to minimi
Diodes Incorporated
Diodes Incorporated
Datenblatt 2N7002DW pdf


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