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2N7002 PDF ( Data Sheet ) |
No | Teilenummer | Beschreibung | Hersteller | |
124 | 2N7002 | 0.20A, 60V, N-Channel MOSFET
2N7000 2N7002
N-CHANNEL 60V - 1.8Ω - 0.35A SOT23-3L - TO-92 STripFET™II MOSFET
Table 1: General Features
TYPE 2N7000 2N7002
Q Q Q
Figure 1: Package
RDS(on) Id 0.35 A 0.20 A
3 2 1
VDSS 60 V 60 V
< 5 Ω (@ 10V) < 5 |
ST Microelectronics |
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123 | 2N7002 | N-CHANNEL MOSFET 2N7002
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions SOT-23 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a SOT-23 Plastic Package.
特征 / Features 灵敏的控制级触发电流和很低的维持电流,内置静� |
BLUE ROCKET ELECTRONICS |
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122 | 2N7002 | 60V, 180mA, N-channel Vertical D-MOS Transistor DISCRETE SEMICONDUCTORS
DATA SHEET
2N7002 N-channel vertical D-MOS transistor
Product specification File under Discrete Semiconductors, SC13b
April 1995
Philips Semiconductors
N-channel vertical D-MOS transistor
Product specification
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Philips |
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121 | 2N7002 | N-Channel Advanced Power MOSFET 2N7002
N-Channel Advanced Power MOSFET
Features
• 60V/0.5A,
RDS (ON) =4500mΩ(Typ.)@VGS=10V RDS (ON) =5250mΩ(Typ.)@VGS=4.5V
• Low On-Resistance • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Devices A |
Ruichips |
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120 | 2N7002 | N-channel MOSFET 2N7002
N-CHANNEL MOSFET
PRODUCT SUMMARY
SOT-23 Plastic-Encapsulate Transistors
FEATURES
High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability
Pb-free; RoHS-c |
Silicon Standard |
Teilenummer | Beschreibung | Hersteller | |
TDA7468 | TWO BANDS DIGITALLY CONTROLLED AUDIO PROCESSOR. |
STMicroelectronics |
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SBW3320 | High Voltage Fast-Swit NPN Power Transistor |
WINSEMI SEMICONDUCTOR |
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RLD78NZM5 | 780nm low power single mode laser diode |
ROHM |
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