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Datasheet 2N4351 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | 2N4351 | MOS FET "
MAXIMUM RATINGS
Rating
Symbol
Value
Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage*
vds vDg Vgs
25 30 30
Drain Current
@Total Device Dissipation T/ = 25°C
Derate above 25°C
@Total Device Dissipation Trj = 25°C
Derate above 25°C
id
Pd
Pd
30
300
1.7
800 4.56
Junction Temp |
 Motorola Semiconductors |
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| 4 | 2N4351 | N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch CORPORATION
N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch
2N4351
FEATURES
• Low ON Resistance • Low Capacitance Gain • High • High Gate Breakdown Voltage • Low Threshold Voltage
PIN CONFIGURATION
ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Drain-Sou |
 Calogic LLC |
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| 3 | 2N4351 | N-CHANNEL MOSFET ENHANCEMENT MODE 2N4351
Linear Integrated Systems
FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT HIGH GAIN ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation Max |
 Linear Integrated Systems |
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| 2 | 2N4351 | Amplifier/Switch 2N4351 N-CHANNEL MOSFET
The 2N4351 is an enhancement mode N-Channel Mosfet
The 2N4351 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications. (See |
 Micross |
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