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Datasheet 2N3866 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 16 | 2N3866 | HIGH FREQUENCY TRANSISTOR 2N3866 2N3866A
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation Ca Jq = 25°C Derate above 25°C
Storage Temperature
Symbol VCEO VCBO VEBO
'c
PD
T stg
Value 30 55 3.5 0.4 5.0 28.6
-65 to +200
Uni |
 Motorola Semiconductors |
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| 15 | 2N3866 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN Planar Epitaxial Overlay Transistor
2N3866
DESCRIPTION ·This type is primarily intended for class-A, B or C amplifiers,
Frequency multiplier and oscillator circuits. ·High Gain Bandwidth Product
fT= 500 MHz (Min.) ·Low Collec |
 Inchange Semiconductor |
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| 14 | 2N3866 | Silicon planar epitaxial overlay transistors DISCRETE SEMICONDUCTORS
DATA SHEET
2N3866; 2N4427 Silicon planar epitaxial overlay transistors
Product specification Supersedes data of August 1986 File under Discrete Semiconductors, SC08a 1995 Oct 27
Philips Semiconductors
Product specification
Silicon planar epitaxial overlay transistors
D |
 NXP Semiconductors |
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| 13 | 2N3866 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
2N3866 / 2N3866A
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Features
• • Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Ga |
 Microsemi Corporation |
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