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Datasheet 2N3055 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 39 | 2N3055 | NPN Power Silicon Transistor 2N3055
NPN Power Silicon Transistor
Features
Available in JAN, JANTX, JANTXV per MIL-PRF19500/407
TO-3 (TO-204AA) Package
Rev. V1
Electrical Characteristics
Parameter Off Characteristics
Collector - Emitter Breakdown Voltage
Collector - Emitter Cutoff Current Emitter - Base Cutoff Current |
 MA-COM |
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| 38 | 2N3055 | POWER TRANSISTORS(15A/50V/115W) A
A
A
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 Mospec Semiconductor |
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| 37 | 2N3055 | 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N3055/D
Complementary Silicon Power Transistors
. . . designed for general–purpose switching and amplifier applications. • DC Current Gain — hFE = 20 – 70 @ IC = 4 Adc • Collector–Emitter Saturation Voltage — VCE(sat) = 1 |
 Motorola Inc |
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| 36 | 2N3055 | 60V, 15A, NPN SILICON POWER TRANSISTORS TAB
1 2
TO-3 Figure 1. Internal schematic diagram
2N3055, MJ2955
Complementary power transistors
Datasheet - production data
Features
• Low collector-emitter saturation voltage • Complementary NPN - PNP transistors
Applications
• General purpose • Audio amplifier
Description
The devices are |
 STMicroelectronics |
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