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2N06L11 Datenblatt PDF

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2 2N03L05    Power-Transistor

OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated P-
Infineon Technologies
Infineon Technologies
Datenblatt 2N03L05 pdf
1 2N04H4   Power-Transistor

OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated P- TO262 -3-1 SPI80N04S2-H4 SPP80N04S2-H4,SPB80N04S2-H4 Product Summary VDS 40 V RDS(on) 4 m
Infineon Technologies
Infineon Technologies
Datenblatt 2N04H4 pdf


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