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Datasheet 2N06L11 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 2N03L05 | Power-Transistor OptiMOS® Power-Transistor
Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on)
product (FOM)
• Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated
P- TO262 -3-1
SPI80N03S2L-05 SPP80N03S2L-05,SPB80N03S2L-05
P |
 Infineon Technologies |
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| 1 | 2N04H4 | Power-Transistor OptiMOS® Power-Transistor
Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated
P- TO262 -3-1
SPI80N04S2-H4 SPP80N04S2-H4,SPB80N04S2-H4
Product Summary
VDS 40 V
RDS(on)
4 mΩ
ID 80 A
P- TO263 -3-2
P- TO220 -3-1
Type SPP80N04S2-H4
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Infineon Technologies |
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