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Datasheet 28C64A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | 28C64A | 64K (8K x 8) CMOS EEPROM 28C64A
64K (8K x 8) CMOS EEPROM
FEATURES
• Fast Read Access Time—150 ns • CMOS Technology for Low Power Dissipation
- 30 mA Active - 100 µA Standby • Fast Byte Write Time—200 µs or 1 ms • Data Retention >200 years • High Endurance - Minimum 100,000 Erase/Write Cycles • Automatic W |
 Microchip Technology |
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| 4 | 28C64A | 64K CMOS EEPROM 28C64A
64K (8K x 8) CMOS EEPROM
FEATURES
• Fast Read Access Time—150 ns • CMOS Technology for Low Power Dissipation
- 30 mA Active - 100 µA Standby • Fast Byte Write Time—200 µs or 1 ms • Data Retention >200 years • High Endurance - Minimum 100,000 Erase/Write Cycles • Automatic W |
Microchip Technology |
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| 3 | 28C64A | High Speed CMOS 64K EEPROM Turbo IC, Inc.
28C64A
HIGH SPEED CMOS 64K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 8K X 8 BIT EEPROM
FEATURES: • 120 ns Access Time • Automatic Page Write Operation Internal Control Timer Internal Data and Address Latches for 64 Bytes • Fast Write Cycle Times Byte or Page Write Cycles: 10 ms Ti |
 Turbo IC |
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| 2 | 28C64A | 64K CMOS EEPROM 28C64A
64K (8K x 8) CMOS EEPROM
FEATURES
• Fast Read Access Time—150 ns • CMOS Technology for Low Power Dissipation
- 30 mA Active - 100 µA Standby • Fast Byte Write Time—200 µs or 1 ms • Data Retention >200 years • High Endurance - Minimum 100,000 Erase/Write Cycles • Automatic W |
Microchip Technology |
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